雙路 5A 復合柵極驅動器
| Number of channels (#) | 2 |
| Power switch | MOSFET |
| Peak output current (A) | 5 |
| Input VCC (Min) (V) | 3.5 |
| Input VCC (Max) (V) | 14 |
| Features | PFET Drive Capability |
| Operating temperature range (C) | -40 to 125 |
| Rise time (ns) | 14 |
| Fall time (ns) | 12 |
| Prop delay (ns) | 25 |
| Input threshold | TTL |
| Channel input logic | Inverting, Non-Inverting, Combination |
| Input negative voltage (V) | 0 |
| Rating | Catalog |
| Undervoltage lockout (Typ) | 3 |
| Driver configuration | Dual, Independent |
- Renewable Energy Grade
- Independently Drives Two N-Channel MOSFETs
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 5A Sink, 3A Source Current Capability
- Two Channels Can be Connected in Parallel to Double the Drive Current
- Independent Inputs (TTL Compatible)
- Fast Propagation Times (25 ns Typical)
- Fast Rise and Fall Times (14 ns Rise, 12 ns Fall With 2 nF Load)
- Available in Dual Noninverting, Dual Inverting, and Combination Configurations
- Supply Rail Under-Voltage Lockout Protection (UVLO)
- SM72482 UVLO Configured to Drive PFET Through OUT_A and NFET Through OUT_B
- Pin Compatible With Industry Standard Gate Drivers
- Packages
- SOIC
- Thermally Enhanced VSSOP
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The SM72482 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package.
