特性
- 高輸入P0.1dB： +46 dBm Tx
- 低插入損耗： 0.4 dB
- 高IIP3： +74 dBm
- 單正控制電壓：
0/ +3V to 0/ +8V - 故障安全操作：
未上電時Tx為“開啟” - 2x2mm DFN SMT封裝
HMC646LP2(E)是一款SPDT開關，采用無引腳DFN表貼塑料封裝，可用于發射/接收和LNA保護等要求極低失真和高達40 W、占空比低于10%的高功率應用。 這款魯棒的開關可控制100 - 2100 MHz*的信號，非常適合TD-SCDMA/3G中繼器、PMR、汽車遠程信息處理和衛星用戶終端應用。 該設計可在發射(Tx)端口提供出色的+46 dBm P0.1 dB和+74 dBm IIP3性能。 當DC電源不可用時，故障安全拓撲提供Tx到RFC的低損耗路徑。
規格和數據為HMC646LP2針對數據手冊中的每個指定頻段使用對應的應用電路進行測量所得。
HMC646LP2ETR 應用
- LNA保護與T/R開關
- TD-SCDMA/3G基礎設施
- 衛星用戶終端
- 專用手機無線電與公用安全手機
- 汽車遠程信息系統
Texas Instruments
ADS5525IRGZT
Analog to Digital Converters - ADCs
1-Channel Single ADC Pipelined 170Msps 12-bit Parallel/Serial/LVDS 48-Pin VQFN EP T/R
Product Technical Specifications
| EU RoHS | Compliant |
| ECCN (US) | 3A991c.2. |
| Part Status | Active |
| HTS | 8542.39.00.01 |
| Automotive | No |
| PPAP | No |
| Converter Type | General Purpose |
| Architecture | Pipelined |
| Resolution | 12bit |
| Number of ADCs | 1 |
| Number of Input Channels | 1 |
| Sampling Rate | 170Msps |
| Digital Interface Type | Parallel|Serial|LVDS |
| Input Type | Voltage |
| Input Signal Type | Differential |
| Voltage Reference | Internal|External |
| Voltage Supply Source | Analog and Digital |
| Input Voltage | 2Vp-p |
| Typical Power Dissipation (mW) | 1100 |
| Maximum Power Dissipation (mW) | 1275 |
| Integral Nonlinearity Error | ±1.6LSB |
| Full Scale Error | ±3%FSR |
| Signal to Noise Ratio | 71.2dBFS(Typ) |
| No Missing Codes (bit) | 12 |
| Sample and Hold | Yes |
| Single-Ended Input | No |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 85 |
| Packaging | Tape and Reel |
| Supplier Temperature Grade | Industrial |
| Mounting | Surface Mount |
| Package Height | 0.95(Max) |
| Package Width | 7.15(Max) |
| Package Length | 7.15(Max) |
| PCB changed | 48 |
| Standard Package Name | QFN |
| Supplier Package | VQFN EP |
| Pin Count | 48 |
| Lead Shape | No Lead |
