HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC1815 is designed for use in driver stage of AF amplifier
general purpose amplification.
Absolute Maximum Ratings
? Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
? Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 400 mW
? Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 60 V
VCEO Collector to Emitter Voltage ..................................................................................... 50 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current ....................................................................................................... 150 mA
IB Base Current ............................................................................................................... 50 mA