資料介紹
The low voltage X4C105 combines several functions into
one device. The first is a 2-wire, 4k-bit serial EEPROM
memory with write protection. A Write Protect (WP) pin
provides hardware protection for the upper half of this
memory against inadvertent writes.
A one nibble NOVRAM is provided and occupies a single
location. This allows access of 4-bits in a single 150ns cycle.
This is useful for tracking system operation or process
status. The NOVRAM memory is completely isolated from
the serial memory section.
A low voltage detect circuit activates a RESET pin when VCC
drops below 3V. This signal also blocks new read or write
operations and initiates a NOVRAM AUTOSTORE. The
AUTOSTORE operation is powered by an external capacitor
to ensure that the value in the NOVRAM is always
maintained in the event of a power failure.
The four NOVRAM bits also appear on four separate output
pins to allow continuous control of external circuitry, such as
ASICs.
Intersil EEPROMs are designed and tested for applications
requiring extended endurance. Inherent data retention is
greater than 100 years.
one device. The first is a 2-wire, 4k-bit serial EEPROM
memory with write protection. A Write Protect (WP) pin
provides hardware protection for the upper half of this
memory against inadvertent writes.
A one nibble NOVRAM is provided and occupies a single
location. This allows access of 4-bits in a single 150ns cycle.
This is useful for tracking system operation or process
status. The NOVRAM memory is completely isolated from
the serial memory section.
A low voltage detect circuit activates a RESET pin when VCC
drops below 3V. This signal also blocks new read or write
operations and initiates a NOVRAM AUTOSTORE. The
AUTOSTORE operation is powered by an external capacitor
to ensure that the value in the NOVRAM is always
maintained in the event of a power failure.
The four NOVRAM bits also appear on four separate output
pins to allow continuous control of external circuitry, such as
ASICs.
Intersil EEPROMs are designed and tested for applications
requiring extended endurance. Inherent data retention is
greater than 100 years.
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