本文綜述了磁電阻(MR) 材料的研究進(jìn)展,并對(duì)目前研究熱點(diǎn)的四類(lèi)巨磁電阻(GMR) 材料進(jìn)行了概括評(píng)述,側(cè)重論述MR 材料在信息存儲(chǔ)等領(lǐng)域的應(yīng)用,明確指出開(kāi)發(fā)和應(yīng)用MR 材料的關(guān)鍵問(wèn)題是提高各類(lèi)GMR 材料的室溫MR 值和降低其工作磁場(chǎng)。
【關(guān)鍵詞】　MR 材料;各向異性磁電阻(AMR) 效應(yīng);GMR 效應(yīng);磁電阻隨機(jī)存儲(chǔ)器(MRAM) ;GMR 傳感器
【Abstract】　In this paper , the progress in the study of magnetoresistance (MR) materials is reviewed and the presently focused four classes of giant magnetoresistance(GMR) materials , particularly the applications of MR materials in information storage and so on. are dis2 cussed. We clearly point out that the key to exploitation and application of MR materials is to increase the room2temperature MR of GMR materials and decrease the external magnetic field.
【Key words】　magnetoresistance(MR) materials ; anisotropic magnetoresistance (AMR) effect ; giant magnetoresistance (GMR) ef2 fect ; magnetoresistance random access memory(MRAM) ; GMR sensor