如何組裝高性能氮化鎵系統(tǒng)

　　采用GaN FET建設(shè)高速系統(tǒng)并不是一件簡(jiǎn)單的事。開(kāi)關(guān)電場(chǎng)可以占據(jù)空間的周圍和上面的包，所以如何使用GaN FET的無(wú)線系統(tǒng)的系統(tǒng)組裝為整體性能的關(guān)鍵。本文討論了不同的封裝技術(shù)對(duì)不同應(yīng)用程序的影響，以及如何將這些封裝技術(shù)用于構(gòu)建高性能的GaN設(shè)備。

　　氮化鎵正迅速取代某些無(wú)線應(yīng)用的技術(shù)。在雙向私人電臺(tái)、寬帶放大器和蜂窩基礎(chǔ)設(shè)施等領(lǐng)域，氮化鎵的優(yōu)點(diǎn)是允許更小、更堅(jiān)固和更可靠的系統(tǒng)。

　　When built on a substrate of silicon carbide （SiC）， GaN offers higher breakdown voltages than other technologies （over 100 V）， as well as electron mobility ten times that of silicon. It is this combination of being able to run at higher temperatures that supports the use in both high-voltage， power switching devices and in RF power amplifiers. With operating channel temperatures over 150°C and a higher power density of 5 to 30 W/mm， class A and AB linear amplifiers are being increasingly used for OFDM， W-CDMA， EDGE and CDMA systems. The higher frequency and power performance means that the devices can be operated at more efficient levels to achieve the same results， giving significant savings in power consumption.