采用硅隔離So I (Silicon on Insulator) 技術(shù),應(yīng)用高能氧離子的注入方法,在單晶硅材料中形
成埋層二氧化硅,用以隔離作為測(cè)量電路的頂部硅層與體硅之間因溫度升高而造成的漏電流. 采用梁膜結(jié)合的壓力傳遞機(jī)構(gòu),將被測(cè)壓力與So I 敏感元件隔離開(kāi)來(lái),因此避免了被測(cè)壓力的瞬時(shí)高溫沖擊. 給出了傳感器的結(jié)構(gòu)模型和實(shí)驗(yàn)數(shù)據(jù),測(cè)試結(jié)果表明,這種新型結(jié)構(gòu)的耐高壓力傳感器,具有較好的動(dòng)靜態(tài)特性.

The silicon on insulator ( So I) technology with seperation by implantation of oxygen
(SIMOX) is adopted to develop silicon dioxide buriedy layer in the silicon material. The layer
effectively isolates the leak current caused by the high temperaturre between the top silicon layer detecting circuit and body silicon. A combined girder2film pressure t ransferred st ructure is used to isolate the measured pressure and the So I sensitive element , so the instantaneous hightemperature (1000 ℃) impact can be avoided. The st ructure model of the t ransducer and the test data are provided in detail. The test result s show that this new type of high temperature resisting pressure t ransducer possesses fine static and dynamic characteristics.