Introduction of New Generation Field-Stop Shorted-Anode IGBT

　　隨著電力電子和半導(dǎo)體的快速發(fā)展，每一個(gè)電力電子應(yīng)用都需要專用和專門的半導(dǎo)體開關(guān)器件從成本和性能的角度來(lái)看。現(xiàn)場(chǎng)停止（FS）的IGBT提供較低的飽和壓降和較低的開關(guān)損耗與傳統(tǒng)的非穿通（NPT）IGBT。此外，一個(gè)相對(duì)較新的改進(jìn)，集成的反并聯(lián)二極管的IGBT芯片通過(guò)使用短路陽(yáng)極（SA）技術(shù)，使FS IGBT非常適合軟開關(guān)功率變換應(yīng)用。

　　現(xiàn)場(chǎng)停止短路陽(yáng)極溝槽IGBT與NPT

　　盡管NPT IGBT提高降低少數(shù)載流子的注入量和關(guān)閉過(guò)渡期間提高重組率的開關(guān)速度，這是不可取的，由于其較高的VCE（SAT）的高功率應(yīng)用，因?yàn)樗腘-基板必須輕摻雜，因此，較厚的基板需要維持電場(chǎng)關(guān)閉狀態(tài)時(shí)如圖1所示（一）。的N -基是IGBTs的飽和壓降的主要因素的厚度。

　　The “n” doped field-stop layer between “n-” drift layer and “p+” collector of a conventional NPT IGBT， as shown in Figure 1（b）， drastically improves the performance of IGBT. This is the field-stop IGBT concept. In the FS IGBT， the electric field rapidly decreases within the field-stop layer while gradually decreasing within “n-” drift layer. Therefore， the thickness of the “n-” drift layer and the saturation voltage drop can be significantly improved. The trench-gate structure also improves the saturation voltage drop. The field-stop layer of a FS IGBT accelerates the majority carrier recombination during the turn-off instance， and thereby， its tail current is much smaller than NPT or PT IGBTs. This leads to lower switching losses and lower turn-off energy， Eoff.